| PART |
Description |
Maker |
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| AT28LV010-20 AT28LV010-25 AT28LV010-20PC AT28LV010 |
1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 200 ns, PDIP32
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 250 ns, PDSO32
|
Atmel Corp.
Atmel, Corp.
|
| MEM8129GMB-15 MEM8129GMB-20 MEM8129GMB-25 MEM8129W |
128K x 8-bit EEPROM, 150ns
128K x 8-bit EEPROM, 200ns
128K x 8-bit EEPROM, 250ns
|
MSI Electronics
|
| 5962-3826707 5962-3826705 5962-3826701 |
128K x 8 EEPROM, MIL-STD-883C, 120ns
128K x 8 EEPROM, CMOS, MIL-STD-883, 150ns
128K EEPROM MIL-STD-883, 250ns
|
Intersil
|
| CAT28LV65WA-15T CAT28LV65GI-15T CAT28LV65GI-20T CA |
8K X 8 EEPROM 3V, 200 ns, PDIP28
64 kb CMOS Parallel EEPROM 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
http://
ON Semiconductor
|
| 25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V
128K SPI serial CMOS EEPROM 2.5-6.0V
SPI Serial EEPROM SPI串行EEPROM
128K/256K-BitSPISerialCMOSE2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
128K SPI serial CMOS EEPROM 1.8-6.0V
256K SPI serial CMOS EEPROM 2.5-6.0V
128K/256K-Bit SPI Serial CMOS E2PROM
|
http://
STMicroelectronics N.V.
Semtech, Corp.
Abracon, Corp.
CatalystSemiconductor
CATALYST[Catalyst Semiconductor]
|
| SST29VE010-200-4I-NHE SST29EE010-70-4I-EHE |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| WE128K32N-150G2TC WE128K32N-150G2TCA WE128K32P-300 |
128K X 32 EEPROM 5V MODULE, 125 ns, CQFP68
128K X 32 EEPROM 5V MODULE, 125 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
MICROSEMI CORP-PMG MICROELECTRONICS
|
| CAT28C17A04 CAT25C17ANA-20T CAT25C17AJ-20T CAT25C1 |
2K X 8 EEPROM 5V, 200 ns, PDSO28
16K-Bit CMOS PARALLEL EEPROM
Parallel EEPROM, 16Kb, RDY/BSY Pin
|
ON SEMICONDUCTOR
CATALYST[Catalyst Semiconductor]
|
| 28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28L |
3.3V 1 Megabit (128K x 8-Bit) EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL
CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C);
CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C);
Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes
CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
|
Maxwell Technologies, Inc
|
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